Information
- Name: Li Xinming
- Telephone: +86 15949871323
- Wechat: j1923986043
- Address: Qingdao shandong province
- Email: 202000120066@mail.sdu.edu.cn
- github: https://github.com/Safori
Education background
Shandong university (SDU) ,undergraduate Micro/Nano Photoelectric Science and Technology
Abilities
Core courses taken:
Semiconductor Physics
Flexible Electronics
linear algebra
higher mathematics
Self-studied courses:
Mathematics Modeling
First principles calculations
Programming languages:
Python
MATLAB
C
LaTeX
Visual Basic
Research experience
Research assistant
2022.03-present /Research group on micro/nano device reliability
Adviser: Li yuan - Associate Professor of Shandong University
1. Boosting the On-State Current of Two-Dimensional Tunnel Field-Effect Transistors by Exploiting Interfacial Surface States (under review)
Abstract:
A strategy is proposed to boost the on-state current (Ion) of two-dimensional tunnel field-effect transistors (2D TFETs) by exploiting interfacial surface states
(ISSs) created at the electrode/channel interfaces. Taking WTe2-based 2D TFETs as a platform, first-principles and quantum-transport modeling approaches are performed to
study the impact of 11 different ISSs on the device performance. It is demonstrated that the Ion of the ISS-TFETs can be boosted up to 2230 μA/μm, which is 4288% as large
as that of the pristine TFETs. The underlying mechanism and the impact of ISS gap and channel length are also revealed.
Responsibility:
This is my first research work. With the guide of Prof. Yuan Li, I propose a strategy to improve Ion of TFET. I calculate band structure, density of state and
effective mass of WTe2 and IV curve of the TFET with ISSs by QuantumATK package. The paper has been submitted.
2. Organic Tunnel Field-Effect Transistors based on Two-Dimensional Covalent-Organic Frameworks (https://doi.org/10.1021/acsanm.3c03366)
Abstract:
We report the computational design of organic tunnel field-effect transistors (OTFETs) with subthreshold swing (SS) much smaller than 60 mV/dec and on-state currents
(Ion) much larger than that of conventional organic FETs. The OTFETs are designed by employing metallophthalocyanine (MPc)-based two-dimensional covalent-organic frameworks
(2D COFs) via first-principles and quantum-transport approaches. The designed OTFETs manifest themselves with SS as small as 21 mV/dec and Ion as large as 887.5 μA/um,
outperforming most TFETs reported in literature and fulfilling the IRDS (International Roadmap for Devices and Systems) requirement for both high-performance (HP) and low-power
(LP) devices. We reveal that 2D MPc-COFs with moderate band gaps are highly required to optimize the device performance. This study provides a novel insight into the rational design
of HP and LP OTFETs based on organic 2D materials.
Responsibility:
Almost all the TFET is based on inorganic materials till now. In this work, I designed an organic TFET based on 2D COFs. What’s more, double layer COFs is used as source to build
van der waals Heterojunction. Because of lower band gap and larger density of state of double larger COFs, OTFETs with van der waals Heterojunction have a much larger Ion than monolayer
OTFETs and can meet the requirements of IRDS. The paper has been accepted by ACS applied nano materials.
3. An Approach to Achieve Single Device Multiplier: Theory, Validation, and Future Explorations (under writing)
Abstract:
In the post-Moore's era, reducing device size and simplifying circuits are two essential methods to further lower power consumption. Here, we propose a novel method that utilizes
a single Tunnel Field-Effect Transistor (TFET) as a frequency multiplier, with the multiplication factor varying based on the amplitude of the input AC voltage and DC bias. By employing
a TFET with x sub-bandgaps as the channel material, we demonstrate the potential for achieving a maximum 2X frequency multiplication. The theoretical analysis is validated through an experimental
implementation using 2D covalent organic frameworks (COFs) based TFETs as a case study. Furthermore, employing a high-throughput search approach, we target and retrieve candidate materials
for TFET channels from the Materials Project database. Our findings offer valuable insights and guidance for the realization of this TFET design, which holds promise for significantly reducing
power consumption and device size in integrated circuits.
Responsibility:
Based on the knowledge acquired during the course on analog circuits and the understanding gained from the previous two works on TFETs, I have proposed a novel method to achieve High
multiplier using a single TFET. In this research, I conducted an in-depth analysis and discussion of potential influencing factors, such as cut-off frequency and operating voltage range. To
identify suitable candidate materials for the TFET channel, I developed Python code and utilized the MPI interface on the Materials Project platform to perform a high-throughput search.
This approach allowed me to efficiently screen and select potential materials that could serve as channel candidates for this unique TFET design. With the main research work completed,
I am currently focused on writing the article.
Program experience
PV Recycling Market Forecast Model Based on ABM Model
Instructor: Li Jiashuo - Professor of Shandong University
- The simulation model of the recycling market based on the Agent model (ABM) obtains the distribution of scrapped PV in the next 30 years and the economic income of the recycling market
- Introduce social factors into consideration by establishing seeding policy and green reputation models to increase the scientificity of simulation results
- Based on the results of the ABM model, a sub-model was established to analyze the energy saving and emission reduction benefits of photovoltaic recycling
- Through mechanism analysis, explore the possible impact of government policies on PV recycling and provide reference for policy formulation
Higher Education Club Cup National College Students Mathematical Modeling-Wave Energy Device Design
Instructor: Shi Qinghua - Associate Professor, Shandong University
- Through mechanism analysis, establish the motion model of the vertical and longing of the offshore wave energy device
- The fourth-order Rungekuta algorithm solves ordinary differential equations
- Optimal coefficient search model for wave energy devices
- Writing and typesetting of competition papers
"Small font, new concept, big energy saving" - Printer Ink Saver Program
- Use Python to measure the ink consumption of different fonts
- Use Visual Basic scripting to achieve one-click replacement of ink-saving fonts for Excel and Word files
- Establish a model to achieve one-click output of toner saving and economic cost data after replacing fonts
Blogs
Language exams
- College English Test Band 4 571
- College English Test Band 6 504
- International English Language Testing System（IELTS） 6.5
- Graduate Record Examinations (GRE) 323
Awards
- 1. First Prize in National College Students' Mathematical Modeling Competition (Top 0.6%) National Awards
- 2. First Prize in Mathorcup National College Students' Mathematical Modeling Challenge (Top 3%) National Awards
- 3. "M Award" in National College Students' Mathematical Modeling Challenge Competition (Top 5%) National Awards
- 4. "H Award" in the American College Students' Mathematical Modeling Contest (Top 10%) National Awards
- 5. Second Prize in National College Students' Electronic Design Competition (Top 20%)Provincial Awards
